IRFH8318TRPBF vs IRFH8201TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFH8318TRPBF sa pamamagitan ng Infineon at IRFH8201TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFH8318TRPBF IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFH8318TRPBF IRFH8201TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IRFH8318TRPBF —
Technology StrongIRFET™ (N-Channel Trench MOSFET) StrongIRFET (trench MOSFET)
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID) at Ta=25°C 27 A —
Continuous Drain Current (ID) at Tc=25°C 120 A —
On-Resistance RDS(on) max at VGS=10V 3.1 mΩ —
Total Gate Charge (Qg) 41 nC 56 nC at VGS=10V
Power Dissipation (Ta) 3.6 W —
Power Dissipation (Tc) 59 W —
Packhaging PQFN 5x6 (SuperSO8, 8-PowerTDFN) SuperSO8 5x6 (PQFN-8) with exposed pad
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55°C to +150°C —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Level ng MSL 1 [DATA_NEEDED: MSL level]
Description Synchronous MOSFET for high-frequency buck converters —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 49 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — 324 A
RDS(on) max at VGS=10V — 0.95 mOhm
Gate Threshold Voltage (VGS(th)) — 1.35 V max
Output Capacitance (Coss) — 7.33 nF
Reverse Transfer Capacitance (Crss) — 850 pF
Power Dissipation (TA) — 3.6 W
Power Dissipation (TC) — 156 W
Hanay ng Temperature na Operasyon — -55C to +150C

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