IRFR1205TRPBF vs IRFR5410TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR1205TRPBF disebabkan oleh Infineon dan IRFR5410TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR1205TRPBF | IRFR5410TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET, 5th generation) | HEXFET (advanced process, Gen 5) |
| Drain-Source Voltage (VDS) | 55 V | -100 V |
| Continuous Drain Current (ID) at TC=25C | 44 A | — |
| Pulsed Drain Current (IDM) | 160 A | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2 V min, 4 V max | — |
| On-Resistance RDS(on) at VGS=10V | 27 mOhm max | — |
| Total Gate Charge (Qg) | 43.3 nC | — |
| Power Dissition (PD) at TC=25C | 107 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant (PBF suffix = lead-free) | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen status] | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at TC = 25 °C | — | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | — | 205 mΩ |
| Total Gate Charge (Qg) typ | — | 70 nC |
| Power Dissition (PD) at TC = 25 °C | — | 66 W |
| Gambaran Suhu Operasi | — | -55 °C to +150 °C (TJ) |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| RDS(on) Test Conditions | — | VGS = -10 V, ID = -7.0 A |