IRFR1205TRPBF vs IRFR5410TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR1205TRPBF sa pamamagitan ng Infineon at IRFR5410TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR1205TRPBF IRFR5410TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology HEXFET (IR MOSFET, 5th generation) HEXFET (advanced process, Gen 5)
Drain-Source Voltage (VDS) 55 V -100 V
Continuous Drain Current (ID) at TC=25C 44 A —
Pulsed Drain Current (IDM) 160 A —
Gate-Source Voltage (VGS) max +/- 20 V ±20 V
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max —
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC —
Power Dissition (PD) at TC=25C 107 W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant (PBF suffix = lead-free) —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
Polarity — P-Channel
Continuous Drain Current (ID) at TC = 25 °C — -13 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V — 205 mΩ
Total Gate Charge (Qg) typ — 70 nC
Power Dissition (PD) at TC = 25 °C — 66 W
Hanay ng Temperature na Operasyon — -55 °C to +150 °C (TJ)
Avalanche Rated — Yes (fully avalanche rated)
Lead-Free / RoHS Status — Lead-free, RoHS compliant (PBF suffix)
Level ng MSL — [DATA_NEEDED: MSL rating]
RDS(on) Test Conditions — VGS = -10 V, ID = -7.0 A

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