IRFR220NTRPBF vs IRFR1205TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR220NTRPBF disebabkan oleh Infineon dan IRFR1205TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR220NTRPBF IRFR1205TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET N-Channel
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET, 5th generation)
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25°C 5 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 160 A
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 2 V min, 4 V max
On-Resistance Rds(on) max at VGS=10V 600 milliohm —
Total Gate Charge (Qg) 15 nC (typical per Mouser listing) 43.3 nC
Maximum Power Dissition (PD) at TC=25°C 43 W —
Suhu Hubungan Operasi -55°C to +150°C -55C to +175C
Kemasan TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited floor life per JEDEC J-STD-020) —
Status RoHS Compliant (PBF suffix) Compliant (PBF suffix = lead-free)
Avalanche Energy Rated Yes (fully characterized) —
Lead-Free Yes (PBF suffix indicates Pb-free plating) —
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 44 A
Gate-Source Voltage (VGS) max — +/- 20 V
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Power Dissition (PD) at TC=25C — 107 W
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

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