IRFR220NTRPBF vs IRFR1205TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR220NTRPBF sa pamamagitan ng Infineon at IRFR1205TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR220NTRPBF | IRFR1205TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET | N-Channel |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET, 5th generation) |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25°C | 5 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 160 A |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 2 V min, 4 V max |
| On-Resistance Rds(on) max at VGS=10V | 600 milliohm | — |
| Total Gate Charge (Qg) | 15 nC (typical per Mouser listing) | 43.3 nC |
| Maximum Power Dissition (PD) at TC=25°C | 43 W | — |
| Temperature ng Junction na Operasyon | -55°C to +150°C | -55C to +175C |
| Packhaging | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited floor life per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant (PBF suffix) | Compliant (PBF suffix = lead-free) |
| Avalanche Energy Rated | Yes (fully characterized) | — |
| Lead-Free | Yes (PBF suffix indicates Pb-free plating) | — |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 44 A |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| On-Resistance RDS(on) at VGS=10V | — | 27 mOhm max |
| Power Dissition (PD) at TC=25C | — | 107 W |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen status] |