IRFR2405TRPBF vs IRFR220NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR2405TRPBF disebabkan oleh Infineon dan IRFR220NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR2405TRPBF IRFR220NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET) HEXFET (Planar)
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max at VGS=10V 16 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-252AA (DPAK) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) + Tab 3 (Gate, Drain, Source) plus tab
Aras MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant (Lead-Free PBF suffix) —
Boson Bebas [DATA_NEEDED: halogen-free status] —
Avalanche Rated Yes (100% avalanche tested) —
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25C — 5 A
Power Dissipation (PD) at TC=25C — 43 W
Static Drain-Source On-Resistance (RDS(on)) max — 0.6 ohm at VGS = 10 V
Kemasan / Case — TO-252AA (DPAK)
Gambaran Suhu Operasi — -55C to +150C (junction)
Lead-Free / RoHS — Yes, lead-free (PBF suffix)
Avalanche Energy Rated — Yes (per datasheet characterization)

Laporan Datasheet & Sumber

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