IRFR5410TRPBF vs IPD042P03L3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR5410TRPBF disebabkan oleh Infineon dan IPD042P03L3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR5410TRPBF | IPD042P03L3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -100 V | -30 V |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| Kemasan | TO-252AA (DPAK), surface mount | PG-TO252-3 (DPAK) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C (TJ) | -55°C to +175°C (TJ) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | OptiMOS™ P (Trench) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| Continuous Drain Current (ID, Tc=25°C) | — | -70 A |
| Pulsed Drain Current (IDM) | — | -280 A |
| RDS(on) max @ VGS = -10 V | — | 4.2 mΩ |
| RDS(on) max @ VGS = -4.5 V | — | [DATA_NEEDED: RDS(on) @ -4.5 V] |
| Gate Threshold Voltage (VGS(th)) | — | -1.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation (PD @ Tc=25°C) | — | 150 W |
| Single-Pulse Avalanche Energy (EAS) | — | 290 mJ |
| Status RoHS | — | Compliant |