IRFR5410TRPBF vs IPD042P03L3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5410TRPBF sa pamamagitan ng Infineon at IPD042P03L3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD042P03L3GATMA1 IPD042P03L3GATMA1 - 30V P-Ch 4.2mΩ 70A MOSFET | Infineon

IPD042P03L3GATMA1 - 30V P-Ch 4.2mΩ 70A MOSFET | Infineon

IPD042P03L3GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR5410TRPBF IPD042P03L3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -100 V -30 V
Continuous Drain Current (ID) at TC = 25 °C -13 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) typ 70 nC —
Packhaging TO-252AA (DPAK), surface mount PG-TO252-3 (DPAK)
Power Dissition (PD) at TC = 25 °C 66 W —
Hanay ng Temperature na Operasyon -55 °C to +150 °C (TJ) -55°C to +175°C (TJ)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) OptiMOS™ P (Trench)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) —
Level ng MSL [DATA_NEEDED: MSL rating] 1
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A —
Continuous Drain Current (ID, Tc=25°C) — -70 A
Pulsed Drain Current (IDM) — -280 A
RDS(on) max @ VGS = -10 V — 4.2 mΩ
RDS(on) max @ VGS = -4.5 V — [DATA_NEEDED: RDS(on) @ -4.5 V]
Gate Threshold Voltage (VGS(th)) — -1.5 V (typ)
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Total Power Dissipation (PD @ Tc=25°C) — 150 W
Single-Pulse Avalanche Energy (EAS) — 290 mJ
Tindminan RoHS — Compliant

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