IRFR5410TRRPBF vs IRLZ34NSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR5410TRRPBF disebabkan oleh Infineon dan IRLZ34NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR5410TRRPBF IRLZ34NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
FET Type MOSFET (Metal Oxide Semiconductor) N-Channel
Technology HEXFET (5th Generation) —
VDS (Drain-Source Voltage) -100 V —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Gate Threshold) -2 V to -4 V —
Continuous Drain Current (ID) at Tc=25C -13 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at 100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 110 A
RDS(on) max at VGS=-10V 205 mΩ —
RDS(on) typical at VGS=-10V 26 mΩ (per Mouser listing for IRFR5410TRPBF) —
Total Gate Charge (Qg) 70 nC 16.7 nC
Power Dissipation (Pd) at Tc=25C 66 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan TO-252AA (DPAK) D2PAK (TO-263), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Rated Yes —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 30 A
RDS(on) at VGS=5V — 35 mOhm (typical)
Gate Threshold Voltage (VGS(th)) — Logic-level (5 V drive compatible)
Power Dissipation (Ta) — 3.8 W
Power Dissipation (Tc) — 68 W
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]
Built-in Body Diode — Yes
Configuration — Single with built-in diode
Switching Frequency Optimization — Below 100 kHz
Cell Structure — HEXFET planar (5th generation)
Qualification — JEDEC standard
Status RoHS — Compliant (Pb-free)

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