IRFR5410TRRPBF vs IRLZ34NSTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5410TRRPBF sa pamamagitan ng Infineon at IRLZ34NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR5410TRRPBF | IRLZ34NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| FET Type | MOSFET (Metal Oxide Semiconductor) | N-Channel |
| Technology | HEXFET (5th Generation) | — |
| VDS (Drain-Source Voltage) | -100 V | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Gate Threshold) | -2 V to -4 V | — |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at 100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 110 A |
| RDS(on) max at VGS=-10V | 205 mΩ | — |
| RDS(on) typical at VGS=-10V | 26 mΩ (per Mouser listing for IRFR5410TRPBF) | — |
| Total Gate Charge (Qg) | 70 nC | 16.7 nC |
| Power Dissipation (Pd) at Tc=25C | 66 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | TO-252AA (DPAK) | D2PAK (TO-263), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 30 A |
| RDS(on) at VGS=5V | — | 35 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (5 V drive compatible) |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 68 W |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single with built-in diode |
| Switching Frequency Optimization | — | Below 100 kHz |
| Cell Structure | — | HEXFET planar (5th generation) |
| Qualification | — | JEDEC standard |
| Tindminan RoHS | — | Compliant (Pb-free) |