IRFR5505TRPBF vs IRFR9024NTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR5505TRPBF disebabkan oleh Infineon dan IRFR9024NTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR5505TRPBF IRFR9024NTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Series HEXFET —
Polarity P-Channel P-Channel
Technology IR MOSFET (HEXFET 5th generation) HEXFET (Generation 5)
Drain-Source Voltage (VDS) max -55 V —
Continuous Drain Current (ID) at TC=25C -18 A -11 A
Pulsed Drain Current (IDM) -72 A —
Gate-Source Voltage (VGS) max +/-20 V +/-20 V
On-Resistance RDS(on) max at VGS=-10V 110 mOhm 175 mOhm
Total Gate Charge (Qg) 21.3 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Rise Time (tr) [DATA_NEEDED: tr] —
Fall Time (tf) [DATA_NEEDED: tf] —
Maximum Power Dissipation (PD) at TC=25C 57 W —
Suhu Hubungan Operasi -55 C to +175 C —
Thermal Resistance Junction-to-Case (RthJC) 2.2 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 50 C/W (typical, DPAK on 1 oz copper) —
Kemasan TO-252AA (DPAK), surface mount —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant (PBF suffix) —
Lead-Free Yes (PBF suffix) —
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — -55 V
Power Dissipation (PD) at TC=25C — 38 W
Gate Charge (Qg) typical — 12.7 nC
Package Type — TO-252AA (DPAK)
Kiraan Pin — 3 (Drain, Gate, Source + Tab)
Gambaran Suhu Operasi — -55C to +175C
Lead-Free / RoHS — Yes (LPBF suffix)
Reel Orientation — Left (TRL suffix)

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