IRFR5505TRPBF vs IRFR9024NTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5505TRPBF sa pamamagitan ng Infineon at IRFR9024NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR5505TRPBF IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF ✓ Nakahanda
Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR5505TRPBF IRFR9024NTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Series HEXFET —
Polarity P-Channel P-Channel
Technology IR MOSFET (HEXFET 5th generation) HEXFET (Generation 5)
Drain-Source Voltage (VDS) max -55 V —
Continuous Drain Current (ID) at TC=25C -18 A -11 A
Pulsed Drain Current (IDM) -72 A —
Gate-Source Voltage (VGS) max +/-20 V +/-20 V
On-Resistance RDS(on) max at VGS=-10V 110 mOhm 175 mOhm
Total Gate Charge (Qg) 21.3 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Rise Time (tr) [DATA_NEEDED: tr] —
Fall Time (tf) [DATA_NEEDED: tf] —
Maximum Power Dissipation (PD) at TC=25C 57 W —
Temperature ng Junction na Operasyon -55 C to +175 C —
Thermal Resistance Junction-to-Case (RthJC) 2.2 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 50 C/W (typical, DPAK on 1 oz copper) —
Packhaging TO-252AA (DPAK), surface mount —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant (PBF suffix) —
Lead-Free Yes (PBF suffix) —
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — -55 V
Power Dissipation (PD) at TC=25C — 38 W
Gate Charge (Qg) typical — 12.7 nC
Package Type — TO-252AA (DPAK)
Bilang ng Pin — 3 (Drain, Gate, Source + Tab)
Hanay ng Temperature na Operasyon — -55C to +175C
Lead-Free / RoHS — Yes (LPBF suffix)
Reel Orientation — Left (TRL suffix)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita