IRFR5505TRPBF vs IRFR9024NTRLPBF 比較
詳細並排比較 IRFR5505TRPBF 由 Infineon 與 IRFR9024NTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR5505TRPBF | IRFR9024NTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Series | HEXFET | — |
| Polarity | P-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET 5th generation) | HEXFET (Generation 5) |
| Drain-Source Voltage (VDS) max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -18 A | -11 A |
| Pulsed Drain Current (IDM) | -72 A | — |
| Gate-Source Voltage (VGS) max | +/-20 V | +/-20 V |
| On-Resistance RDS(on) max at VGS=-10V | 110 mOhm | 175 mOhm |
| Total Gate Charge (Qg) | 21.3 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Rise Time (tr) | [DATA_NEEDED: tr] | — |
| Fall Time (tf) | [DATA_NEEDED: tf] | — |
| Maximum Power Dissipation (PD) at TC=25C | 57 W | — |
| 工作接面溫度 | -55 C to +175 C | — |
| Thermal Resistance Junction-to-Case (RthJC) | 2.2 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 50 C/W (typical, DPAK on 1 oz copper) | — |
| 封裝 | TO-252AA (DPAK), surface mount | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant (PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | -55 V |
| Power Dissipation (PD) at TC=25C | — | 38 W |
| Gate Charge (Qg) typical | — | 12.7 nC |
| Package Type | — | TO-252AA (DPAK) |
| 腳位數 | — | 3 (Drain, Gate, Source + Tab) |
| 工作溫度範圍 | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (LPBF suffix) |
| Reel Orientation | — | Left (TRL suffix) |