IRFR9120NTRPBF vs IRFR9120NTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR9120NTRPBF disebabkan oleh Infineon dan IRFR9120NTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR9120NTRPBF IRFR9120NTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V -100 V
Continuous Drain Current (ID) at TC=25C -6.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max at VGS=-10V 480 milliohm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] -2 V to -4 V
Total Gate Charge (Qg) 18 nC (typical) —
Continuous Power Dissipation (PD) at TC=25C 40 W —
Gambaran Suhu Hubungan Operasi -55C to +175C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Kemasan TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited floor life) 1
Lead Finish / Plating Pb-free (PBF suffix), Matte Tin —
Technology HEXFET fifth-generation IR MOSFET IR MOSFET (planar)
Status RoHS Compliant Compliant (Pb-free)
Moisture Sensitivity MSL1 per JEDEC J-STD-020 —
Transistor Polarity — P-Channel
Continuous Drain Current (ID) — -6.6 A (Tc)
Gate-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) — 480 mOhm max @ VGS = -10 V
Gate Charge (Qg) — 18 nC (typ)
Power Dissipation (PD) — 40 W (Tc)
Gambaran Suhu Operasi — -55C to +150C (Tj)
Kiraan Pin — 3 (Gate, Drain, Source)
Lead-Free — Yes

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