IRFR9120NTRPBF vs IRFR9120NTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR9120NTRPBF sa pamamagitan ng Infineon at IRFR9120NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR9120NTRPBF IRFR9120NTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V -100 V
Continuous Drain Current (ID) at TC=25C -6.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max at VGS=-10V 480 milliohm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] -2 V to -4 V
Total Gate Charge (Qg) 18 nC (typical) —
Continuous Power Dissipation (PD) at TC=25C 40 W —
Hanay ng Temperature ng Junction na Operasyon -55C to +175C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Packhaging TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (unlimited floor life) 1
Lead Finish / Plating Pb-free (PBF suffix), Matte Tin —
Technology HEXFET fifth-generation IR MOSFET IR MOSFET (planar)
Tindminan RoHS Compliant Compliant (Pb-free)
Moisture Sensitivity MSL1 per JEDEC J-STD-020 —
Transistor Polarity — P-Channel
Continuous Drain Current (ID) — -6.6 A (Tc)
Gate-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) — 480 mOhm max @ VGS = -10 V
Gate Charge (Qg) — 18 nC (typ)
Power Dissipation (PD) — 40 W (Tc)
Hanay ng Temperature na Operasyon — -55C to +150C (Tj)
Bilang ng Pin — 3 (Gate, Drain, Source)
Lead-Free — Yes

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