IRFR9120NTRPBF vs IRFR9120NTRLPBF 比較

詳細並排比較 IRFR9120NTRPBF 由 Infineon 與 IRFR9120NTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFR9120NTRPBF IRFR9120NTRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V -100 V
Continuous Drain Current (ID) at TC=25C -6.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max at VGS=-10V 480 milliohm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] -2 V to -4 V
Total Gate Charge (Qg) 18 nC (typical) —
Continuous Power Dissipation (PD) at TC=25C 40 W —
工作接面溫度範圍 -55C to +175C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
封裝 TO-252AA (DPAK), surface mount TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited floor life) 1
Lead Finish / Plating Pb-free (PBF suffix), Matte Tin —
Technology HEXFET fifth-generation IR MOSFET IR MOSFET (planar)
RoHS 狀態 Compliant Compliant (Pb-free)
Moisture Sensitivity MSL1 per JEDEC J-STD-020 —
Transistor Polarity — P-Channel
Continuous Drain Current (ID) — -6.6 A (Tc)
Gate-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) — 480 mOhm max @ VGS = -10 V
Gate Charge (Qg) — 18 nC (typ)
Power Dissipation (PD) — 40 W (Tc)
工作溫度範圍 — -55C to +150C (Tj)
腳位數 — 3 (Gate, Drain, Source)
Lead-Free — Yes

資料表與資源

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