IRFS3006TRL7PP vs IPB60R040CFD7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFS3006TRL7PP disebabkan oleh Infineon dan IPB60R040CFD7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFS3006TRL7PP IPB60R040CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $5.19
Jenis Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET™ planar) Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V 600 V
Continuous Drain Current (ID) at Tc 240 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max 2.1 mΩ (per Mouser snippet) —
On-Resistance RDS(on) typ 1.5 mΩ —
Gate Charge (Qg) 200 nC (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Power Dissipation (PD) at Tc 375 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan D2PAK (TO-263), 7-Lead, Surface Mount PG-TO263-3-2 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Body Diode Intrinsic, avalanche-rated —
Aras MSL 1 (unlimited) 1
Status RoHS Compliant Compliant
Avalanche Energy (EAS) [DATA_NEEDED: single-pulse avalanche energy] —
RθJC Thermal Resistance [DATA_NEEDED: junction-to-case thermal resistance] —
Manufacturer — Infineon Technologies
Product Family — CoolMOS CFD7
Continuous Drain Current (ID, Tc=25°C) — 50 A
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Pembuangan Kuasa (TC=25°C) — 227 W
Gambaran Suhu Operasi — -55°C to +150°C
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

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