IRFU9024NPBF vs IRF520NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFU9024NPBF disebabkan oleh Infineon dan IRF520NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFU9024NPBF | IRF520NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -11 A | — |
| Pulsed Drain Current (IDM) | -44 A | — |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 175 mOhm max | — |
| Gate-Source Threshold Voltage (VGS(th)) | -4 V max | — |
| Total Gate Charge (Qg) | 12.7 nC | — |
| Input Capacitance (Ciss) | 170 pF | — |
| Output Capacitance (Coss) | 92 pF | — |
| Reverse Transfer Capacitance (Crss) | 350 pF | — |
| Power Dissipation (PD) at Tc=25C | 38 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | IPAK (TO-251AA) Through-Hole | TO-220AB (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Avalanche Rated | Yes | — |
| Generation | Fifth-Generation HEXFET | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Aras MSL | — | 1 (unlimited) |
| Status RoHS | — | Compliant (Pb-free) |
| Lead-Free Finish | — | Yes (PBF suffix) |
| Technology | — | HEXFET (vertical DMOS) |