IRFU9024NPBF vs IRF520NPBF 比較

詳細並排比較 IRFU9024NPBF 由 Infineon 與 IRF520NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFU9024NPBF IRF520NPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -11 A —
Pulsed Drain Current (IDM) -44 A —
Drain-Source On-Resistance (RDS(on)) at VGS=-10V 175 mOhm max —
Gate-Source Threshold Voltage (VGS(th)) -4 V max —
Total Gate Charge (Qg) 12.7 nC —
Input Capacitance (Ciss) 170 pF —
Output Capacitance (Coss) 92 pF —
Reverse Transfer Capacitance (Crss) 350 pF —
Power Dissipation (PD) at Tc=25C 38 W —
工作接面溫度 -55C to +175C —
封裝 IPAK (TO-251AA) Through-Hole TO-220AB (through-hole)
安裝類型 Through Hole Through Hole
Lead-Free / RoHS Status Lead-Free, RoHS Compliant —
Avalanche Rated Yes —
Generation Fifth-Generation HEXFET —
Manufacturer — Infineon Technologies
Series — HEXFET
FET Type — N-Channel
Drain-to-Source Voltage (V_DSS) — 100 V
Continuous Drain Current (I_D) at Tc — 9.7 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (V_GS) max — ±20 V
R_DS(on) max at V_GS=10V — 200 mOhm
Total Gate Charge (Q_g) — 16.7 nC
Power Dissipation (P_D) at Tc — 48 W
工作溫度範圍 — -55C to +175C
MSL 等級 — 1 (unlimited)
RoHS 狀態 — Compliant (Pb-free)
Lead-Free Finish — Yes (PBF suffix)
Technology — HEXFET (vertical DMOS)

資料表與資源

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