IRFZ48NSTRLPBF vs IRLR3636TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ48NSTRLPBF disebabkan oleh Infineon dan IRLR3636TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ48NSTRLPBF IRLR3636TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Power MOSFET N-Channel MOSFET
Drain-to-Source Voltage (VDS) 55 V 60 V
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM rating]
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC —
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan D2PAK (TO-263) Surface Mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) —
Lead Finish Lead-free (PBF) matte tin —
Status RoHS Compliant —
Technology Family HEXFET advanced process technology —
Technology — IR HEXFET® (IR MOSFET™)
Continuous Drain Current (ID, TC=25°C) — 50 A
Continuous Drain Current (ID, TC=100°C) — 32 A [DATA_NEEDED: exact TC=100°C ID rating]
RDS(on) Max @ VGS=10V — 6.8 mΩ
Gate-to-Source Voltage (VGS) Max — ±20 V
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (logic-level)
Total Gate Charge (QG) — 33 nC
Power Dissipation (PD, TC=25°C) — 143 W
Gambaran Suhu Operasi — -55 °C to +175 °C (TJ)
Lead-Free / RoHS — Yes (PBF suffix)
Avalanche Rated — Yes (per Infineon datasheet family)

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