IRFZ48NSTRLPBF vs IRLR3636TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFZ48NSTRLPBF sa pamamagitan ng Infineon at IRLR3636TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFZ48NSTRLPBF IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF ✓ Nakahanda
Infineon
IRLR3636TRLPBF IRLR3636TRLPBF - 60V 99A N-Ch IR MOSFET, DPAK | Infineon

IRLR3636TRLPBF - 60V 99A N-Ch IR MOSFET, DPAK | Infineon

IRLR3636TRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFZ48NSTRLPBF IRLR3636TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel Power MOSFET N-Channel MOSFET
Drain-to-Source Voltage (VDS) 55 V 60 V
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM rating]
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC —
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging D2PAK (TO-263) Surface Mount TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) —
Lead Finish Lead-free (PBF) matte tin —
Tindminan RoHS Compliant —
Technology Family HEXFET advanced process technology —
Technology — IR HEXFET® (IR MOSFET™)
Continuous Drain Current (ID, TC=25°C) — 50 A
Continuous Drain Current (ID, TC=100°C) — 32 A [DATA_NEEDED: exact TC=100°C ID rating]
RDS(on) Max @ VGS=10V — 6.8 mΩ
Gate-to-Source Voltage (VGS) Max — ±20 V
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (logic-level)
Total Gate Charge (QG) — 33 nC
Power Dissipation (PD, TC=25°C) — 143 W
Hanay ng Temperature na Operasyon — -55 °C to +175 °C (TJ)
Lead-Free / RoHS — Yes (PBF suffix)
Avalanche Rated — Yes (per Infineon datasheet family)

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