IRL3705NPBF vs IRF3205STRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRL3705NPBF disebabkan oleh Infineon dan IRF3205STRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRL3705NPBF IRF3205STRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (V_DS) 55 V —
Continuous Drain Current (I_D) at Tc 89 A —
Arus Alir Gesa [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc 170 W —
On-Resistance R_DS(on) 10 mOhm (typical, V_GS = 5 V) —
Gate Threshold V_GS(th) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Q_g 65.3 nC —
Maximum Junction Temperature 175 C —
Technology HEXFET (planar cell, fifth generation) HEXFET (advanced process)
Kemasan TO-220AB (3-pin through-hole) TO-263-3 (D2PAK)
Jenis Pemasangan Through Hole Surface Mount
Gate Drive Level Logic-level —
Avalanche Rated Yes (ruggedized single-pulse avalanche) —
Lead-Free (PBF suffix) Yes —
Status RoHS Compliant (per PBF suffix) —
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) @ Tc=25°C — 110 A
Pulsed Drain Current (Idm) — 390 A
Static Drain-Source On-Resistance (Rds(on)) — 8 mΩ max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) — 2.0 V to 4.0 V
Total Gate Charge (Qg) — 97.3 nC typical
Power Dissipation (Pd) @ Tc=25°C — 200 W
Gambaran Suhu Operasi — -55 °C to +175 °C (Tj)
Lead-Free / RoHS Status — Lead-Free / RoHS Compliant (PBF suffix)
Packaging — Tape & Reel (STRL)

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