IRL3705NPBF vs IRF3205STRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRL3705NPBF tarafından Infineon ve IRF3205STRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRL3705NPBF | IRF3205STRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc | 89 A | — |
| Pulsed Dræn Akımı | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc | 170 W | — |
| On-Resistance R_DS(on) | 10 mOhm (typical, V_GS = 5 V) | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | 65.3 nC | — |
| Maximum Junction Temperature | 175 C | — |
| Technology | HEXFET (planar cell, fifth generation) | HEXFET (advanced process) |
| Paket | TO-220AB (3-pin through-hole) | TO-263-3 (D2PAK) |
| Montaj Türü | Through Hole | Surface Mount |
| Gate Drive Level | Logic-level | — |
| Avalanche Rated | Yes (ruggedized single-pulse avalanche) | — |
| Lead-Free (PBF suffix) | Yes | — |
| RoHS Durumu | Compliant (per PBF suffix) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 110 A |
| Pulsed Drain Current (Idm) | — | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | — | 8 mΩ max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25°C | — | 200 W |
| İşletim Sıcaklığı Aralığı | — | -55 °C to +175 °C (Tj) |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant (PBF suffix) |
| Packaging | — | Tape & Reel (STRL) |