IRLML0030TRPBF vs IRLML2030TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML0030TRPBF disebabkan oleh Infineon dan IRLML2030TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLML0030TRPBF | IRLML2030TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | — |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | — |
| Total Gate Charge (Qg) | 3.6 nC typical | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | Micro3 / SOT-23 (3-pin) | Micro3 (SOT-23) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | HEXFET (IR MOSFET) |
| Aras MSL | 1 (unlimited floor life per JEDEC J-STD-020) | MSL 1 |
| Soldering | Wave-solder capable | Wave-solder compatible |
| Qualification | JEDEC standard | JEDEC standard |
| Status RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRLML2030TRPBF |
| Continuous Drain Current (ID) at Ta | — | 2.7 A |
| Power Dissipation (PD) at Ta | — | 1.3 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 100 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 154 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Charge (Qg) typ | — | 1.0 nC |
| Suhu Operasi | — | -55C to +150C (junction) |
| RoHS Compliance | — | Yes (lead-free, halogen-free) |