IRLML2060TRPBF vs BSR802NL6327HTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML2060TRPBF disebabkan oleh Infineon dan BSR802NL6327HTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLML2060TRPBF | BSR802NL6327HTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| Pulsed Drain Current (IDM) | 4.8 A | — |
| Gate-to-Source Voltage (VGS) max | +/- 12 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.8 V typical | [DATA_NEEDED: VGS(th) typical value] |
| RDS(on) max at VGS=10V | 480 mOhm | — |
| RDS(on) max at VGS=4.5V | 650 mOhm (typical 580 mOhm) | — |
| Power Dissipation (PD) at TA=25C | 1.25 W | — |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | 100 C/W | — |
| Suhu Hubungan Operasi | -55C to +150C | -55C to +150C |
| Kemasan | SOT-23 (Micro3, 3-pin) | PG-SC59-3 (SC-59 / SOT-346) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | IR HEXFET (Trench Gate) | OptiMOS 2 (N-Channel Trench MOSFET) |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Aras MSL | MSL1 | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR802NL6327HTSA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 20 V |
| Continuous Drain Current (ID) max | — | 3.7 A (Ta=25C) |
| Power Dissipation (PD) max | — | 500 mW (Ta=25C) |
| On-Resistance (RDS(on)) typ | — | 23 mOhm @ VGS=4.5 V |
| Qualification | — | Automotive |
| Kiraan Pin | — | 3 |