IRLML2060TRPBF vs BSR802NL6327HTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML2060TRPBF sa pamamagitan ng Infineon at BSR802NL6327HTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSR802NL6327HTSA1 - 20V N-Ch 3.7A OptiMOS 2 MOSFET | Infineon
BSR802NL6327HTSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRLML2060TRPBF | BSR802NL6327HTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| Pulsed Drain Current (IDM) | 4.8 A | — |
| Gate-to-Source Voltage (VGS) max | +/- 12 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.8 V typical | [DATA_NEEDED: VGS(th) typical value] |
| RDS(on) max at VGS=10V | 480 mOhm | — |
| RDS(on) max at VGS=4.5V | 650 mOhm (typical 580 mOhm) | — |
| Power Dissipation (PD) at TA=25C | 1.25 W | — |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | 100 C/W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | -55C to +150C |
| Packhaging | SOT-23 (Micro3, 3-pin) | PG-SC59-3 (SC-59 / SOT-346) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | IR HEXFET (Trench Gate) | OptiMOS 2 (N-Channel Trench MOSFET) |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Level ng MSL | MSL1 | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR802NL6327HTSA1 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 20 V |
| Continuous Drain Current (ID) max | — | 3.7 A (Ta=25C) |
| Power Dissipation (PD) max | — | 500 mW (Ta=25C) |
| On-Resistance (RDS(on)) typ | — | 23 mOhm @ VGS=4.5 V |
| Qualification | — | Automotive |
| Bilang ng Pin | — | 3 |