IRLR2905TRPBF vs IRLR7843TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR2905TRPBF disebabkan oleh Infineon dan IRLR7843TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR2905TRPBF | IRLR7843TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | HEXFET |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | 32 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Yes / Compliant | Yes (PBF suffix = lead-free) |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Gate Drive | Logic-level compatible | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 161 A |
| Power Dissipation (Pd) @ Tc=25C | — | 140 W |
| On-Resistance Rds(on) Max @ Vgs=10V | — | 3.3 mOhm |
| On-Resistance Rds(on) Max @ Vgs=4.5V | — | 4.5 mOhm (typ) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | 34 nC |
| Gate-to-Source Voltage Max | — | ±20 V |
| Avalanche Energy (Eas) | — | Fully characterized |
| Gambaran Suhu Operasi | — | -55C to +175C |