IRLR2905TRPBF vs IRLR7843TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLR2905TRPBF sa pamamagitan ng Infineon at IRLR7843TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLR2905TRPBF | IRLR7843TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | HEXFET |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | 32 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Lead-Free / RoHS | Yes / Compliant | Yes (PBF suffix = lead-free) |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Gate Drive | Logic-level compatible | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 161 A |
| Power Dissipation (Pd) @ Tc=25C | — | 140 W |
| On-Resistance Rds(on) Max @ Vgs=10V | — | 3.3 mOhm |
| On-Resistance Rds(on) Max @ Vgs=4.5V | — | 4.5 mOhm (typ) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | 34 nC |
| Gate-to-Source Voltage Max | — | ±20 V |
| Avalanche Energy (Eas) | — | Fully characterized |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |