IRLR2905TRPBF vs IRLR7843TRPBF 比較

詳細並排比較 IRLR2905TRPBF 由 Infineon 與 IRLR7843TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLR2905TRPBF IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF ✓ 啟用中
Infineon
IRLR7843TRPBF IRLR7843TRPBF - 30V 161A N-Ch HEXFET MOSFET | Infineon

IRLR7843TRPBF - 30V 161A N-Ch HEXFET MOSFET | Infineon

IRLR7843TRPBF ✓ 啟用中

規格比較

參數 IRLR2905TRPBF IRLR7843TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET —
Technology HEXFET (IR MOSFET, fifth generation) HEXFET
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max @ VGS=10V 27 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate Charge (Qg) 32 nC —
Power Dissipation (PD) at Tc=25C 110 W —
工作接面溫度 -55C to +175C —
封裝 TO-252AA (DPAK), surface mount TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
Avalanche Rated Yes —
Lead-Free / RoHS Yes / Compliant Yes (PBF suffix = lead-free)
MSL 等級 [DATA_NEEDED: MSL rating] —
Gate Drive Logic-level compatible —
Polarity — N-Channel
Drain-Source Voltage (Vdss) — 30 V
Continuous Drain Current (Id) @ Tc=25C — 161 A
Power Dissipation (Pd) @ Tc=25C — 140 W
On-Resistance Rds(on) Max @ Vgs=10V — 3.3 mOhm
On-Resistance Rds(on) Max @ Vgs=4.5V — 4.5 mOhm (typ)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — 34 nC
Gate-to-Source Voltage Max — ±20 V
Avalanche Energy (Eas) — Fully characterized
工作溫度範圍 — -55C to +175C

資料表與資源

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