IRLR3636TRLPBF vs IRFZ48NSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3636TRLPBF disebabkan oleh Infineon dan IRFZ48NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLR3636TRLPBF IRFZ48NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET N-Channel Power MOSFET
Technology IR HEXFET® (IR MOSFET™) —
Drain-to-Source Voltage (VDS) 60 V 55 V
Continuous Drain Current (ID, TC=25°C) 50 A —
Continuous Drain Current (ID, TC=100°C) 32 A [DATA_NEEDED: exact TC=100°C ID rating] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM rating] [DATA_NEEDED: pulsed drain current]
RDS(on) Max @ VGS=10V 6.8 mΩ —
Gate-to-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level) —
Total Gate Charge (QG) 33 nC —
Power Dissipation (PD, TC=25°C) 143 W —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) —
Kemasan TO-252AA (DPAK) D2PAK (TO-263) Surface Mount
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) —
Avalanche Rated Yes (per Infineon datasheet family) —
Continuous Drain Current (ID) @ Tc=25C — 64 A
Static Drain-to-Source On-Resistance (Rds(on)) — 14 mΩ at VGS = 10 V
Gate-to-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Total Gate Charge (Qg) — 54 nC
Gate-to-Source Voltage (VGS) max — ±20 V
Power Dissipation (Pd) @ Tc=25C — 130 W
Power Dissipation (Pd) @ Ta=25C on FR-4 — 3.8 W
Suhu Hubungan Operasi — -55C to +175C
Packaging — Tape & Reel (13-inch reel, TRL)
Lead Finish — Lead-free (PBF) matte tin
Status RoHS — Compliant
Technology Family — HEXFET advanced process technology

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