IRLR9343TRPBF vs IRF7416TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR9343TRPBF disebabkan oleh Infineon dan IRF7416TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLR9343TRPBF IRF7416TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLR9343TRPBF —
FET Type P-Channel MOSFET P-Channel
Technology IR HEXFET HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] -50 A
On-Resistance RDS(on) max at VGS=-10V 105 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] -1 V to -3 V
Total Gate Charge (Qg) 31 nC (typical) 61 nC
Power Dissipation (PD) at Tc=25C 79 W —
Kemasan PG-TO252-3 (DPAK) Surface Mount 8-SO (SOIC-8)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max operating range] —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Aras MSL 1 1 (unlimited)
Optimized Application Class-D audio amplifier output stages —
Polarity P-Channel —
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) at TA=25C — -10 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 20 mOhm at VGS = -10 V
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) max at TA=25C — 2.5 W
Thermal Resistance, Junction-to-Ambient (RthJA) — 50 C/W
Gambaran Suhu Hubungan Operasi — -55 C to +150 C

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