IRLR9343TRPBF vs IRF7416TRPBF 比較

詳細並排比較 IRLR9343TRPBF 由 Infineon 與 IRF7416TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLR9343TRPBF IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF ✓ 啟用中
Infineon
IRF7416TRPBF IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF ✓ 啟用中

規格比較

參數 IRLR9343TRPBF IRF7416TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLR9343TRPBF —
FET Type P-Channel MOSFET P-Channel
Technology IR HEXFET HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] -50 A
On-Resistance RDS(on) max at VGS=-10V 105 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] -1 V to -3 V
Total Gate Charge (Qg) 31 nC (typical) 61 nC
Power Dissipation (PD) at Tc=25C 79 W —
封裝 PG-TO252-3 (DPAK) Surface Mount 8-SO (SOIC-8)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: Tj min/max operating range] —
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
MSL 等級 1 1 (unlimited)
Optimized Application Class-D audio amplifier output stages —
Polarity P-Channel —
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) at TA=25C — -10 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 20 mOhm at VGS = -10 V
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) max at TA=25C — 2.5 W
Thermal Resistance, Junction-to-Ambient (RthJA) — 50 C/W
工作接面溫度範圍 — -55 C to +150 C

資料表與資源

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