IRLR9343TRPBF vs IRF7416TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLR9343TRPBF sa pamamagitan ng Infineon at IRF7416TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRLR9343TRPBF IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF ✓ Nakahanda
Infineon
IRF7416TRPBF IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRLR9343TRPBF IRF7416TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLR9343TRPBF —
FET Type P-Channel MOSFET P-Channel
Technology IR HEXFET HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] -50 A
On-Resistance RDS(on) max at VGS=-10V 105 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] -1 V to -3 V
Total Gate Charge (Qg) 31 nC (typical) 61 nC
Power Dissipation (PD) at Tc=25C 79 W —
Packhaging PG-TO252-3 (DPAK) Surface Mount 8-SO (SOIC-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon [DATA_NEEDED: Tj min/max operating range] —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Level ng MSL 1 1 (unlimited)
Optimized Application Class-D audio amplifier output stages —
Polarity P-Channel —
Drain-to-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) at TA=25C — -10 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 20 mOhm at VGS = -10 V
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) max at TA=25C — 2.5 W
Thermal Resistance, Junction-to-Ambient (RthJA) — 50 C/W
Hanay ng Temperature ng Junction na Operasyon — -55 C to +150 C

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