IRLU3410PBF vs BSC074N15NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLU3410PBF disebabkan oleh Infineon dan BSC074N15NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLU3410PBF | BSC074N15NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number | IRLU3410PBF | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 17 A | — |
| Continuous Drain Current (ID) at Tc=100C | 12 A | — |
| Drain-to-Source On-Resistance (RDS(on)) | 105 mOhm at VGS=10 V | — |
| Total Gate Charge (Qg) | 22.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 79 W | — |
| Gate Threshold Voltage (VGS(th)) | Logic level | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | I-PAK (TO-251AA), through-hole | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Avalanche Rated | Yes | — |
| RoHS / Lead-Free | Compliant (Pb-free) | — |
| HEXFET Generation | Fifth generation | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ 5 trench |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25°C | — | 114 A |
| Power Dissition (PD) at TC=25°C | — | 214 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 7.4 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: TJ min/max] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| Status RoHS | — | Compliant |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| Body Diode | — | Integrated |