IRLU3410PBF vs BSC074N15NS5ATMA1 对比
详细并排对比 IRLU3410PBF 出自 Infineon 和 BSC074N15NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLU3410PBF | BSC074N15NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.36 | $1.45 |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number | IRLU3410PBF | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 17 A | — |
| Continuous Drain Current (ID) at Tc=100C | 12 A | — |
| Drain-to-Source On-Resistance (RDS(on)) | 105 mOhm at VGS=10 V | — |
| Total Gate Charge (Qg) | 22.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 79 W | — |
| Gate Threshold Voltage (VGS(th)) | Logic level | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | I-PAK (TO-251AA), through-hole | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks |
| 安装类型 | Through Hole | Surface Mount |
| Avalanche Rated | Yes | — |
| RoHS / Lead-Free | Compliant (Pb-free) | — |
| HEXFET Generation | Fifth generation | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ 5 trench |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25°C | — | 114 A |
| Power Dissition (PD) at TC=25°C | — | 214 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 7.4 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| 工作温度范围 | — | [DATA_NEEDED: TJ min/max] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total] |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| Body Diode | — | Integrated |