IRLZ34NPBF vs IRF520NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLZ34NPBF disebabkan oleh Infineon dan IRF520NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLZ34NPBF IRF520NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies
Part Number Suffix PBF = Lead-free (Pb-free), Tube packaging —
Jenis Transistor N-Channel HEXFET Power MOSFET —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25 C 30 A —
Continuous Drain Current (ID) at Tc=100 C [DATA_NEEDED: ID at Tc=100 C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) max @ VGS=10 V 35 mOhm —
On-Resistance Rds(on) max @ VGS=5 V [DATA_NEEDED: Rds(on) at VGS=5 V] —
Gate Threshold Voltage VGS(th) 1.0 V to 2.0 V (logic-level) —
Total Gate Charge (Qg) 16.7 nC (typical) —
Power Dissipation (PD) at Tc=25 C 68 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan TO-220AB (through-hole, 3 leads + tab) TO-220AB (through-hole)
Jenis Pemasangan Through Hole Through Hole
Status RoHS Compliant (Pb-free PBF suffix) Compliant (Pb-free)
Aras MSL Not applicable (through-hole) 1 (unlimited)
Series — HEXFET
FET Type — N-Channel
Drain-to-Source Voltage (V_DSS) — 100 V
Continuous Drain Current (I_D) at Tc — 9.7 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (V_GS) max — ±20 V
R_DS(on) max at V_GS=10V — 200 mOhm
Total Gate Charge (Q_g) — 16.7 nC
Power Dissipation (P_D) at Tc — 48 W
Gambaran Suhu Operasi — -55C to +175C
Lead-Free Finish — Yes (PBF suffix)
Technology — HEXFET (vertical DMOS)

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