IRLZ34NPBF vs IRF520NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLZ34NPBF sa pamamagitan ng Infineon at IRF520NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLZ34NPBF | IRF520NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | — |
| Uri ng Transistor | N-Channel HEXFET Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | — |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | — |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | — |
| Total Gate Charge (Qg) | 16.7 nC (typical) | — |
| Power Dissipation (PD) at Tc=25 C | 68 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | TO-220AB (through-hole, 3 leads + tab) | TO-220AB (through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Tindminan RoHS | Compliant (Pb-free PBF suffix) | Compliant (Pb-free) |
| Level ng MSL | Not applicable (through-hole) | 1 (unlimited) |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |
| Lead-Free Finish | — | Yes (PBF suffix) |
| Technology | — | HEXFET (vertical DMOS) |