IS43TR16256AL-125KBL vs H5TC4G63CFR-H9A Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IS43TR16256AL-125KBL disebabkan oleh ISSI, Integrated Silicon Solution Inc dan H5TC4G63CFR-H9A disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IS43TR16256AL-125KBL | H5TC4G63CFR-H9A |
|---|---|---|
| Merek | ISSI, Integrated Silicon Solution Inc | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SDRAM - DDR3L | DDR3L SDRAM |
| Saiz Ingatan | 4Gbit (256M x 16) | — |
| Antaramuka | Parallel | — |
| Clock Frequency | 800 MHz | — |
| Access Time | 20 ns | — |
| Tegangan Pemberi Arus | 1.35V (backward compatible to 1.5V) | — |
| Kemasan | 96-TWBGA (9x13mm) | 96-ball TFBGA |
| Jenis Pemasangan | Surface Mount | — |
| Suhu Operasi | 0°C ~ 95°C | — |
| Memory Format | DRAM | — |
| Technology | SDRAM - DDR3L | — |
| Kadar Data | 1600 Mbps | [DATA_NEEDED: Data rate (e.g., 1866 Mbps)] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Number of Terminals | 96 | 96 |
| Memory Density | — | 4Gb (4294967296 bit) |
| Organisasi | — | 256M x 16 |
| Supply Voltage (VDD) | — | 1.35V + 0.100 / - 0.067V |
| Supply Voltage (VDDQ) | — | 1.35V + 0.100 / - 0.067V |
| Package Shape | — | RECTANGULAR |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: Operating temperature range] |
| Boson Bebas | — | Yes |
| Latensi CAS | — | [DATA_NEEDED: CAS latency] |
| Burst Length | — | 8, 4 (with burst chop) |
| Differential Clock Inputs | — | Yes (CK, CK) |
| Differential Data Strobe | — | Yes (DQS, DQS) |
| On-Chip DLL | — | Yes |
| DM (Data Mask) | — | Yes |