ISA250300C04LMDSXTMA1 vs IRF7341GTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISA250300C04LMDSXTMA1 disebabkan oleh Infineon dan IRF7341GTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISA250300C04LMDSXTMA1 IRF7341GTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Configuration Dual N-channel + P-channel (N+P array) Dual N-Channel
Drain-Source Voltage (VDS) 40 V 55 V
Continuous Drain Current N-channel 5.9 A (Ta), 7.9 A (Tc) —
Continuous Drain Current P-channel 5.8 A (Ta), 7.8 A (Tc) —
Power Dissipation 1.4 W (Ta), 2.5 W (Tc) —
Kemasan SO-8 (PG-DSO-8-920) 8-SO (SOIC-8)
Jenis Pemasangan Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 3) IR HEXFET Planar MOSFET
Packaging Tape & Reel (suffix XTMA1) —
Datasheet Document Infineon ISA250300C04LMDS datasheet (per Infineon product page) —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55 C to +175 C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range per channel] [DATA_NEEDED: typical VGS(th) value]
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) per channel at specified VGS] —
Status RoHS Compliant Compliant
Lead-Free Yes Yes (PBF suffix)
Continuous Drain Current (ID) — 5.1 A
On-Resistance (RDS(on)) max — 50 mOhm at VGS=10V
Power Dissipation (PD) — 2.4 W
Maximum Junction Temperature — 175 C
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]

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