ISC011N04NM7VATMA1 vs BSC011N03LSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N04NM7VATMA1 disebabkan oleh Infineon dan BSC011N03LSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC011N04NM7VATMA1 BSC011N03LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V 30 V
Continuous Drain Current (ID) at TA=25°C 38 A —
Continuous Drain Current (ID) at TC 256 A —
On-Resistance RDS(on) max @ VGS=10V 1.1 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 136 W —
Gate Threshold Voltage (Vth) Up to 3.2 V —
Technology Trench MOSFET, silicon Trench MOSFET
Kemasan PG-TDSON-8 (source-down) PG-TDSON-8 FL (8-pin, exposed drain pad)
Jenis Pemasangan Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) —
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) —
RoHS Compliance Compliant (per Infineon product page) —
Aras MSL MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Series — OptiMOS
Continuous Drain Current (ID) at TA=25C — 39 A
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 1.1 mOhm (typical 0.9 mOhm)
Gate-Source Threshold Voltage VGS(th) typ — 2 V
Gate-Source Voltage (VGS) max — +/-20 V
Total Gate Charge (Qg) typ — 72 nC
Power Dissipation at TA=25C — 3 W
Power Dissipation at TC=25C — 115 W
Suhu Hubungan Operasi — -55C to +150C
Configuration — Single with built-in diode
Status RoHS — Compliant

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