ISC015N06NM5ATMA1 vs IAUC41N06S5N102ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N06NM5ATMA1 disebabkan oleh Infineon dan IAUC41N06S5N102ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC015N06NM5ATMA1 | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TA=25C | 33 A | — |
| Pulsed Drain Current (IDM) at TC=25C | 259 A | — |
| On-Resistance RDS(on) typical at VGS=10V | 1.5 mOhm | — |
| Total Power Dissipation (TA) | 3 W | — |
| Total Power Dissipation (TC) | 188 W | — |
| Kemasan | PG-TDSON-8 (PQFN 5x6) Drain-Down | PG-TDSON-8-33 (SSO8) Surface Mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 C to +175 C | -55C to +175C (junction) |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| Status RoHS | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | 1 | — |
| Part Family | — | OptiMOS 5 Power-Transistor |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | — | 42 W |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| Automotive Qualification | — | AEC-Q101 (per Infineon automotive MOSFET family) |
| Channel Polarity | — | N-Channel (single) |