ISC078N12NM6ATMA1 vs ISC011N04NM7VATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC078N12NM6ATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISC078N12NM6ATMA1 - 120V 85A N-Ch MOSFET 7.8mΩ SuperSO8 | Infineon
ISC078N12NM6ATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | ISC078N12NM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 7 Power-Transistor |
| Technology | N-Channel Trench MOSFET | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 120 V | 40 V |
| Continuous Drain Current (ID) at Tc | 85 A | — |
| Continuous Drain Current (ID) at Ta | 13.2 A | — |
| On-Resistance RDS(on) typ at VGS=10V | 7.8 mΩ | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 3 W | — |
| Kemasan | SuperSO8 (TDSON-8) | PG-TDSON-8 (source-down) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55 °C to +175 °C (TJ) |
| Kiraan Pin | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | — |
| Status RoHS | Compliant | — |
| Aras MSL | 1 | MSL 1 (per JEDEC J-STD-020) |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |