ISC078N12NM6ATMA1 vs ISC011N04NM7VATMA1 比較
詳細並排比較 ISC078N12NM6ATMA1 由 Infineon 與 ISC011N04NM7VATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC078N12NM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 7 Power-Transistor |
| Technology | N-Channel Trench MOSFET | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 120 V | 40 V |
| Continuous Drain Current (ID) at Tc | 85 A | — |
| Continuous Drain Current (ID) at Ta | 13.2 A | — |
| On-Resistance RDS(on) typ at VGS=10V | 7.8 mΩ | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 3 W | — |
| 封裝 | SuperSO8 (TDSON-8) | PG-TDSON-8 (source-down) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C (junction) | -55 °C to +175 °C (TJ) |
| 腳位數 | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ at VGS=10V] | — |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | 1 | MSL 1 (per JEDEC J-STD-020) |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |