ISC078N12NM6ATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of ISC078N12NM6ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter ISC078N12NM6ATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 OptiMOS 7 Power-Transistor
Technology N-Channel Trench MOSFET Trench MOSFET, silicon
Drain-Source Voltage (VDS) 120 V 40 V
Continuous Drain Current (ID) at Tc 85 A β€”
Continuous Drain Current (ID) at Ta 13.2 A β€”
On-Resistance RDS(on) typ at VGS=10V 7.8 mΞ© β€”
Power Dissipation at Tc 125 W β€”
Power Dissipation at Ta 3 W β€”
Package SuperSO8 (TDSON-8) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55 Β°C to +175 Β°C (TJ)
Pin Count 8 β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] β€”
RoHS Status Compliant β€”
MSL Level 1 MSL 1 (per JEDEC J-STD-020)
Lead-Free Yes β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
Continuous Drain Current (ID) at TC β€” 256 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
RoHS Compliance β€” Compliant (per Infineon product page)

Datasheets & Resources

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