ISC078N12NM6ATMA1 vs ISC011N04NM7VATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC078N12NM6ATMA1 sa pamamagitan ng Infineon at ISC011N04NM7VATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC078N12NM6ATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 OptiMOS 7 Power-Transistor
Technology N-Channel Trench MOSFET Trench MOSFET, silicon
Drain-Source Voltage (VDS) 120 V 40 V
Continuous Drain Current (ID) at Tc 85 A —
Continuous Drain Current (ID) at Ta 13.2 A —
On-Resistance RDS(on) typ at VGS=10V 7.8 mΩ —
Power Dissipation at Tc 125 W —
Power Dissipation at Ta 3 W —
Packhaging SuperSO8 (TDSON-8) PG-TDSON-8 (source-down)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C (junction) -55 °C to +175 °C (TJ)
Bilang ng Pin 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ at VGS=10V] —
Tindminan RoHS Compliant —
Level ng MSL 1 MSL 1 (per JEDEC J-STD-020)
Lead-Free Yes —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)

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