JMTG070N06A vs DMN3190LDW-7 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci JMTG070N06A disebabkan oleh Jiejie Micro dan DMN3190LDW-7 disebabkan oleh Diodes Incorporated. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ AktifPengandingan Spesifikasi
| Parametr | JMTG070N06A | DMN3190LDW-7 |
|---|---|---|
| Merek | Jiejie Micro | Diodes Incorporated |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Jiejie Micro (JJW) | — |
| Part Number | JMTG070N06A | — |
| Polarity / Type | N-channel Enhancement Mode | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 70 A | 1 A |
| On-Resistance RDS(ON) | < 6 mOhm @ VGS = 10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Technology | Advanced Trench MOSFET | Silicon N-Channel MOSFET |
| Kemasan | PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) | SOT-363 (SC-70-6) 6-pin |
| Jenis Pemasangan | Surface Mount (SMD) | Surface Mount |
| Single Pulse Avalanche Energy (EAS) | IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) | — |
| Lead Status | Lead free / RoHS compliant | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: TJ max and operating range] | — |
| Thermal Resistance RthJA | [DATA_NEEDED: theta_JA] | — |
| Configuration | Single N-channel MOSFET | Dual, independent drains |
| FET Type | — | Dual N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 30 V |
| Gate-Source Voltage (VGS) | — | 20 V |
| Power Dissipation (PD) | — | 320 mW |
| Suhu Operasi | — | -55C to +150C |
| Channel Mode | — | Enhancement |
| Aras MSL | — | 1 (unlimited) |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Factory Pack Quantity | — | 3000 |