K3KL7L70EM-MGCU vs K3KL2L20DM-JGCT Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K3KL7L70EM-MGCU disebabkan oleh Samsung Electronics dan K3KL2L20DM-JGCT disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung
K3KL7L70EM-MGCU ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K3KL7L70EM-MGCU | K3KL2L20DM-JGCT |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Samsung Electronics | — |
| Jenis Ingatan | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 12 Gbit (1.5 GB) | 48 Gb |
| Kemasan | 315-ball FBGA | 441-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grade Suffix | -MGCU | — |
| Kadar Data | [DATA_NEEDED: data rate Mbps/pin] | 7500 Mbps |
| Supply Voltage VDD | [DATA_NEEDED: VDD core voltage] | — |
| Supply Voltage VDDQ | [DATA_NEEDED: VDDQ I/O voltage] | — |
| Organisasi | [DATA_NEEDED: organization x32] | x64 |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Bank Architecture | [DATA_NEEDED: bank group count] | — |
| Latensi CAS | [DATA_NEEDED: CAS latency] | — |
| Refresh | Self-refresh and per-bank refresh per JEDEC LPDDR5X | — |
| Termination | On-Die Termination (ODT) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| Antaramuka | — | LPDDR5X (JEDEC low-power DRAM interface) |
| Product Status | — | Mass Production |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |