K3KL7L70EM-MGCU vs K3KL2L20DM-JGCT 比較
詳細並排比較 K3KL7L70EM-MGCU 由 Samsung Electronics 與 K3KL2L20DM-JGCT 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K3KL7L70EM-MGCU - 12Gb LPDDR5X DRAM, 315-Ball FBGA | Samsung
K3KL7L70EM-MGCU ✓ 啟用中
規格比較
| 參數 | K3KL7L70EM-MGCU | K3KL2L20DM-JGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Samsung Electronics | — |
| 記憶體類型 | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Density | 12 Gbit (1.5 GB) | 48 Gb |
| 封裝 | 315-ball FBGA | 441-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Speed Grade Suffix | -MGCU | — |
| 資料速率 | [DATA_NEEDED: data rate Mbps/pin] | 7500 Mbps |
| Supply Voltage VDD | [DATA_NEEDED: VDD core voltage] | — |
| Supply Voltage VDDQ | [DATA_NEEDED: VDDQ I/O voltage] | — |
| 組織 | [DATA_NEEDED: organization x32] | x64 |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Bank Architecture | [DATA_NEEDED: bank group count] | — |
| CAS 延遲 | [DATA_NEEDED: CAS latency] | — |
| Refresh | Self-refresh and per-bank refresh per JEDEC LPDDR5X | — |
| Termination | On-Die Termination (ODT) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | unknown |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| 介面 | — | LPDDR5X (JEDEC low-power DRAM interface) |
| Product Status | — | Mass Production |
| Generation | — | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) |
| Application Segment | — | AI devices, automotive, mobile |