K4A4G085WF-BITD vs K4A4G085WG-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G085WF-BITD disebabkan oleh Samsung Electronics dan K4A4G085WG-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G085WF-BITD | K4A4G085WG-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (Volatile) |
| Density | 4 Gbit | — |
| Organisasi | 512M x 8 | — |
| Speed | 2666 Mbps (MT/s) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| VPP Voltage | 2.5 V | — |
| Suhu Operasi | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 78-ball FBGA (78FBGA) | FBGA-78 (BCW) |
| Bank Architecture | 8 banks x 4 bank groups | — |
| Burst Length | BL8 | BL8 |
| Latensi CAS | CL19 (typical at 2666 Mbps) | — |
| Jenis Pemasangan | Surface Mount (BGA) | Surface Mount |
| Antaramuka | Parallel, DDR4 SSTL12 | Parallel (DDR4) |
| Refresh | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) | [DATA_NEEDED: refresh rate specification] |
| Termination | ODT / dynamic ODT | — |
| Data Mask | DM supported (x8) | — |
| Application Grade | Industrial | — |
| Saiz Ingatan | — | 4 Gb |
| Memory Organization | — | 512M x 8 |
| Kadar Data | — | 3200 Mbps/pin |
| Speed Class | — | DDR4-3200 |
| Technology | — | D-die DDR4 |
| DLL Mode | — | DLL Enabled (per datasheet timing) |
| Status RoHS | — | Compliant |
| Packaging | — | Tray |