K4A4G085WF-BITD vs K4A4G085WG-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WF-BITD sa pamamagitan ng Samsung Electronics at K4A4G085WG-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A4G085WF-BITD | K4A4G085WG-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (Volatile) |
| Density | 4 Gbit | — |
| Organisasyon | 512M x 8 | — |
| Speed | 2666 Mbps (MT/s) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| VPP Voltage | 2.5 V | — |
| Temperature na Operasyon | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| Packhaging | 78-ball FBGA (78FBGA) | FBGA-78 (BCW) |
| Bank Architecture | 8 banks x 4 bank groups | — |
| Burst Length | BL8 | BL8 |
| Latensya ng CAS | CL19 (typical at 2666 Mbps) | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Interface | Parallel, DDR4 SSTL12 | Parallel (DDR4) |
| Refresh | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) | [DATA_NEEDED: refresh rate specification] |
| Termination | ODT / dynamic ODT | — |
| Data Mask | DM supported (x8) | — |
| Application Grade | Industrial | — |
| Laki ng Memory | — | 4 Gb |
| Memory Organization | — | 512M x 8 |
| Rate ng Data | — | 3200 Mbps/pin |
| Speed Class | — | DDR4-3200 |
| Technology | — | D-die DDR4 |
| DLL Mode | — | DLL Enabled (per datasheet timing) |
| Tindminan RoHS | — | Compliant |
| Packaging | — | Tray |